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FDMS86101E

FDMS86101E

FDMS86101E

ON Semiconductor

FET 100V 8.0 MOHM PQFN56

SOT-23

FDMS86101E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12.4A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:1041 items

About FDMS86101E

The FDMS86101E from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features FET 100V 8.0 MOHM PQFN56.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDMS86101E, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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