FDMS8350LET40 Description
This N-Channel MV MOSFET FDMS8350LET40 is produced using ON Semiconductor’s advanced POWERTRENCH process that has been specially tailored to minimize the on−state resistance and yet maintain superior switching performance. The transistor FDMS8350LET40 can be applied in Primary DC−DC MOSFET, Secondary Synchronous Rectifier, and Load Switch.
FDMS8350LET40 Features
Max RDS(on) = 0.85 m at VGS = 10 V, ID = 47 A
Max RDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A
Advanced Package and Silicon combination for Low rDS(on) and High Efficiency
MSL1 Robust Package Design
100% UIL Tested
Pb−Free and RoHS Compliant
FDMS8350LET40 Applications
Primary DC−DC MOSFET
Secondary Synchronous Rectifier
Load Switch
