FDMC86106LZ Description
Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make these N-Channel logic Level MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.
FDMC86106LZ Features
Technology for Shielded Gate MOSFETs
At Vqs = 10 V, I= 3.3 A, Max ros(on)= 103 mQ.
At Vgs = 4.5 V, Iq = 2.7 A, MaxDsfon) =153 mQ.
Typical HBM ESD protection level > 3 KV (Note 4)
100% UIL Approved and RoHS Compliant
FDMC86106LZ Applications
DC - DC Conversion
