FDMC6688P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC6688P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
26.8mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.5m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7435pF @ 10V
Current - Continuous Drain (Id) @ 25°C
14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs
61nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
56A
JEDEC-95 Code
MO-240BA
Drain Current-Max (Abs) (ID)
14A
Drain-source On Resistance-Max
0.0065Ohm
Pulsed Drain Current-Max (IDM)
226A
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant
In-Stock:3509 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.023040
$7.02304
10
$6.625509
$66.25509
100
$6.250481
$625.0481
500
$5.896680
$2948.34
1000
$5.562905
$5562.905
FDMC6688P Product Details
FDMC6688P Description
FDMC6688P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced [email protected] process that has been optimized for rDs(ON)， switching performance, and ruggedness. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for rDs(ON)， switching performance, and ruggedness.
FDMC6688P Features
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Lead-free and RoHS Compliant
FDMC6688P Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
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