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FDMA1024NZ

FDMA1024NZ

FDMA1024NZ

ON Semiconductor

FDMA1024NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA1024NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingGold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 54MOhm
Subcategory FET General Purpose Power
Max Power Dissipation700mW
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.4W
Case Connection DRAIN
Turn On Delay Time5.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 4.5V
Rise Time2.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 750μm
Length 2mm
Width 2mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6437 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.308000$4.308
10$4.064151$40.64151
100$3.834105$383.4105
500$3.617080$1808.54
1000$3.412340$3412.34

FDMA1024NZ Product Details

FDMA1024NZ Description

The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.


FDMA1024NZ Features

Max rDS(on) = 54 m|? at VGS = 4.5 V, ID = 5.0 A

Max rDS(on) = 66 m|? at VGS = 2.5 V, ID = 4.2 A

Max rDS(on) = 82 m|? at VGS= 1.8 V, ID = 2.3 A

Max rDS(on) = 114 m|? at VGS = 1.5 V, ID = 2.0 A

HBM ESD protection level = 1.6 kV (Note 3)

Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm

RoHS Compliant

Free from halogenated compounds and antimonyoxides


FDMA1024NZ Applications

This product is general usage and suitable for many different applications.



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