FDG8850NZ Description
The dual N-channel logic level enhanced mode field effect transistor is produced by proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG8850NZ Features
Max rDS(on) = 0.4|? at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5|? at VGS = 2.7V, ID = 0.67A
Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
FDG8850NZ Applications
This product is general usage and suitable for many different applications.
