Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDD850N10LD

FDD850N10LD

FDD850N10LD

ON Semiconductor

MOSF N CH 100V 15.7A DPAK

SOT-23

FDD850N10LD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
JESD-30 Code R-PSSO-G4
Number of Elements 1
Power Dissipation-Max 42W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.3A Tc
Gate Charge (Qg) (Max) @ Vgs 28.9nC @ 10V
Rise Time21ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 15.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.096Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 41 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4960 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.313869$0.313869
10$0.296103$2.96103
100$0.279343$27.9343
500$0.263530$131.765
1000$0.248614$248.614

About FDD850N10LD

The FDD850N10LD from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSF N CH 100V 15.7A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDD850N10LD, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News