Name: FDD6796A
Brand: ON Semiconductor
SKU: FDD6796A
Price: 0.52000 USD
Availability: InStock

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FDD6796A

Manufacturer part number:FDD6796A

Manufacturer:ON Semiconductor

Description:FDD6796A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD6796A Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.7W Ta 42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1780pF @ 13V
Current - Continuous Drain (Id) @ 25°C	20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	67A
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	40 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant

FDD6796A Product Details

FDD6796A Description

With either synchronous or traditional switching FWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low gs(on), and quick switching speed have all been optimized for. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.