FDD6685 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDD6685 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 17 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
20MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
-40A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
52W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
52W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 5V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
21 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
-40A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
30V
Nominal Vgs
1.8 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:6009 items
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FDD6685 Product Details
FDD6685 Description
The FDD6685 is a 30v P-channel MOSFET. The onsemi FDD6685 is a rugged gate version of the advanced PowerTrench? process, with a fast switching speed and high-performance trench technology for extremely low RDS(ON). It is designed for power management applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD6685 is in the DPAK-3 package with 52W power dissipation.
FDD6685 Features
-40A, -30V
RDS(ON) = 20 mΩ @ VGS = -10V
RDS(ON) = 30 mΩ @ VGS = -4.5V
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDD6685 Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
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