Description
The FDD6637 is a PowerTrench? MOSFET that operates at -35V and has been specifically designed to reduce on-state resistance and preserve low gate charge for enhanced switching performance. The most recent medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small gate charge (QG), and a tiny reverse recovery charge (Qrr) to contribute to quick switching for synchronous rectification in AC/DC power supply. Charge balance is provided by the shielded-gate construction it uses. The FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower thanks to the use of this cutting-edge technology than that of the previous generation. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET allows for the elimination of snubber circuits or the replacement of higher voltage rating - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
High performance trench technology for extremely low RDS (on)
–55 A, –35 V RDS(ON) = 11.6 mW @ VGS = –10 V
RDS(ON) = 18 mW @ VGS = –4.5 V
RoHS Compliant
Withstand voltage
Low On-Resistance
High current
Applications
