FDD4685 Description
The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
FDD4685 Features
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
High-performance trench technology for extremely low rDS(on)
RoHS Compliant
FDD4685 Applications
