FDC699P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC699P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package
SuperSOT™-6 FLMP
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
22mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2640pF @ 10V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
38nC @ 5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
In-Stock:13922 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.315437
$7.315437
10
$6.901356
$69.01356
100
$6.510712
$651.0712
500
$6.142182
$3071.091
1000
$5.794511
$5794.511
FDC699P Product Details
FDC699P Description
The P-Channel 2.5V specified MOSFET FDC699P is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). FDC699P Features
–7 A, –20 V RDS(ON) = 22 m? @ VGS = –4.5 V RDS(ON) = 30 m? @ VGS = –2.5 V High performance trench technology for extremely low RDS(ON) Fast switching speed FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size FDC699P Applications
Battery management Load Switch Battery protection
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