FDC658AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC658AP Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
50MOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
7 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
470pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
8.1nC @ 5V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
4mA
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-1.8 V
Feedback Cap-Max (Crss)
90 pF
Height
900μm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:18598 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.085737
$1.085737
10
$1.024280
$10.2428
100
$0.966302
$96.6302
500
$0.911606
$455.803
1000
$0.860005
$860.005
FDC658AP Product Details
FDC658AP Description
FDC658AP P-Channel Logic Level MOSFET is produced using the ON Semiconductor's advanced PowerTrench process. It has been optimized for battery power management applications.
![SIA440DJ-T1-GE3 - MOSFET 40V [email protected] 12A N-CH](http://img.hotenda.com/thumb/1987376/sia440dj-t1-ge3.jpg)
