FDC6561AN Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for all applications that require small size but especially low-cost DC/DC conversions in battery power systems.
FDC6561AN Features
2.5 A, 30 V
RDS(ON) = 0.095 |? @ VGS = 10 V
RDS(ON) = 0.145 |? @ VGS = 4.5 V
Very fast switching
Low gate charge (2.1nC typical
SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6561AN Applications
This product is general usage and suitable for many different applications.
