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FDC655BN_NBNN007

FDC655BN_NBNN007

FDC655BN_NBNN007

ON Semiconductor

MOSFET N-CH 30V 6.3A SUPERSOT6

SOT-23

FDC655BN_NBNN007 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 800mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.3A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:4445 items

About FDC655BN_NBNN007

The FDC655BN_NBNN007 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 6.3A SUPERSOT6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDC655BN_NBNN007, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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