Name: FDC5612_F095
Brand: ON Semiconductor
SKU: FDC5612_F095
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.6W Ta
Power Dissipation	1.6W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	55m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	4.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant

FDC5612_F095 Product Details

FDC5612_F095 Description

The FDC5612_F095 MOSFET from Fairchild Semiconductor is a high-performance power MOSFET designed for use in a wide range of low-voltage applications. It has a low on-state resistance, which allows for high efficiency in switching applications. It also has a low gate charge, which makes it easier to drive with low-voltage signals. The FDC5612_F095 is 100% avalanche tested to ensure reliable performance in harsh operating conditions. It is halogen-free and RoHS-compliant, making it an environmentally friendly choice for electronic applications. Overall, the FDC5612_F095 is a high-performance, versatile MOSFET that is ideal for use in a wide range of low-voltage applications.