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FDB8832-F085

FDB8832-F085

FDB8832-F085

ON Semiconductor

Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

SOT-23

FDB8832-F085 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 34A Ta
Gate Charge (Qg) (Max) @ Vgs 265nC @ 10V
Rise Time73ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 1246 mJ
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:1811 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.032483$1.032483
10$0.974041$9.74041
100$0.918906$91.8906
500$0.866893$433.4465
1000$0.817823$817.823

About FDB8832-F085

The FDB8832-F085 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDB8832-F085, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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