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FDB3632_SB82115

FDB3632_SB82115

FDB3632_SB82115

ON Semiconductor

INTEGRATED CIRCUIT

SOT-23

FDB3632_SB82115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingBulk
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:4111 items

About FDB3632_SB82115

The FDB3632_SB82115 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features INTEGRATED CIRCUIT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDB3632_SB82115, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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