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FDB10AN06A0

FDB10AN06A0

FDB10AN06A0

ON Semiconductor

MOSFET N-CH 60V 75A TO-263AB

SOT-23

FDB10AN06A0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 135W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:2848 items

About FDB10AN06A0

The FDB10AN06A0 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 75A TO-263AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDB10AN06A0, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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