FCP190N65F Description
SuperFETJIMOSFET is a new series of high voltage superjunction (SJ) MOSFET products that use charge balance technology to achieve excellent on-resistance and lower gate charge performance. This technology is designed to minimize on-loss and provide excellent switching performance, dv/dt ratings and higher avalanche energy. Therefore, SuperFET IMOSFET is very suitable for switching electric vehicles, such as PFC, server / telecom power supply, flat screen TV power supply, AX power supply and industrial power applications. The reverse recovery performance of SuperFETII FRFETMOSFET optimized volume diode can remove additional components and improve the reliability of the system.
FCP190N65F Features
[email protected]=150 ℃
Typical value RDS (on) = 168m Ω
Ultra-low gate charge (typical value Q=60nC)
Low effective output capacitance (typical value Coss (ef1.) = 186pF),
100% avalanche test
conforming to RoHS standard
FCP190N65F Application
LCD/LED/PDPTV
solar inverter
AC-DC power supply
