FCH35N60

Name: FCH35N60
Brand: ON Semiconductor
SKU: FCH35N60
Price: 3.66000 USD
Availability: InStock

new-10%

Manufacturer part number:FCH35N60

Manufacturer:ON Semiconductor

Description:FCH35N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCH35N60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	SuperMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	312.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	312.5W
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	98m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	181nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	73 ns
Turn-Off Delay Time	105 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.098Ohm
Drain to Source Breakdown Voltage	600V
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

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