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EMC3DXV5T1G

EMC3DXV5T1G

EMC3DXV5T1G

ON Semiconductor

EMC3DXV5T1G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available on our website

SOT-23

EMC3DXV5T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-553
Surface MountYES
Number of Pins 5
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation500mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number EMC3DXV5
Pin Count5
Max Output Current100mA
Operating Supply Voltage50V
Number of Elements 2
Polarity NPN, PNP
Configuration COMPLEX
Power Dissipation357mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
Collector Emitter Saturation Voltage250mV
Emitter Base Voltage (VEBO) 6V
hFE Min 35
DC Current Gain-Min (hFE) 35
Continuous Collector Current 100mA
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:17384 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.678146$0.678146
10$0.639760$6.3976
100$0.603547$60.3547
500$0.569384$284.692
1000$0.537155$537.155

EMC3DXV5T1G Product Details

EMC3DXV5T1G Description


EMC3DXV5T1G is a 50V Dual Common Base-Collector Bias Resistor Transistor. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device.



EMC3DXV5T1G Features


Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

Pb?Free Devices



EMC3DXV5T1G Applications


Automotive

Body electronics & lighting

Communications equipment

Datacom module

Personal electronics

Connected peripherals & printers


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