The ON Semiconductor DTC115EM3T5G is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of applications. It is a NPN transistor with a maximum collector current of 260 mW and a maximum collector-emitter voltage of 40 V. The device is housed in a SOT-723 package and is designed to provide a low-cost solution for applications requiring a pre-biased transistor.
Features of the DTC115EM3T5G include: • Low-cost solution for applications requiring a pre-biased transistor • Maximum collector current of 260 mW • Maximum collector-emitter voltage of 40 V • Housed in a SOT-723 package
Applications of the DTC115EM3T5G include: • Automotive • Industrial • Consumer electronics • Power management • Lighting • Telecommunications
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