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CPH3144-TL-E

CPH3144-TL-E

CPH3144-TL-E

ON Semiconductor

CPH3144-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

CPH3144-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation900mW
Reach Compliance Code not_compliant
Power - Max 900mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 260mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage30V
Frequency - Transition 440MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 200
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2059 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.809758$2.809758
10$2.650715$26.50715
100$2.500675$250.0675
500$2.359127$1179.5635
1000$2.225591$2225.591

CPH3144-TL-E Product Details

CPH3144-TL-E Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 75mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.During maximum operation, collector current can be as low as 2A volts.

CPH3144-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 260mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V

CPH3144-TL-E Applications


There are a lot of ON Semiconductor CPH3144-TL-E applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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