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BUB323ZT4

BUB323ZT4

BUB323ZT4

ON Semiconductor

BUB323ZT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUB323ZT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation150W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating10A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BUB323
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A 4.6V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A
Collector Emitter Breakdown Voltage350V
Transition Frequency 2MHz
Frequency - Transition 2MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 500
Continuous Collector Current 10A
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4879 items

BUB323ZT4 Product Details

BUB323ZT4 Overview


This device has a DC current gain of 500 @ 5A 4.6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages should be kept at 10A to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 2MHz in the part.When collector current reaches its maximum, it can reach 10A volts.

BUB323ZT4 Features


the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz

BUB323ZT4 Applications


There are a lot of ON Semiconductor BUB323ZT4 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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