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BUB323Z

BUB323Z

BUB323Z

ON Semiconductor

BUB323Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUB323Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTube
Published 2005
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation150W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating10A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BUB323
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A 4.6V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A
Collector Emitter Breakdown Voltage350V
Transition Frequency 2MHz
Frequency - Transition 2MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 500
Continuous Collector Current 10A
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1475 items

BUB323Z Product Details

BUB323Z Overview


DC current gain in this device equals 500 @ 5A 4.6V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.7V @ 250mA, 10A.Continuous collector voltage should be kept at 10A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

BUB323Z Features


the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz

BUB323Z Applications


There are a lot of ON Semiconductor BUB323Z applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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