BSS64LT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 1V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.There is a transition frequency of 60MHz in the part.A maximum collector current of 100mA volts can be achieved.
BSS64LT1 Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BSS64LT1 Applications
There are a lot of ON Semiconductor BSS64LT1 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
