BSR18A Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -35V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 250MHz is present in the part.An input voltage of 40V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BSR18A Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -35V
the current rating of this device is -200mA
a transition frequency of 250MHz
BSR18A Applications
There are a lot of ON Semiconductor BSR18A applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
