BS170 Description
TheseBS170 N-channelenhanced mode field effect transistors are produced using ONSemi's proprietary high cell density DMOS technology. These products are designed to minimize-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications that require up to 500 mA DC. These products are particularly suitable for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers and other switching applications.
BS170Features
? High Density Cell Design for Low RDS(ON)
? Voltage Controlled Small Signal Switch
? Rugged and Reliable
? High Saturation Current Capability
? These are Pb?Free Devices
BS170 Applications
small servo motor controls
power MOSFET gate drivers
other switching applications
