BD788 Overview
DC current gain in this device equals 40 @ 200mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 50MHz.A maximum collector current of 4A volts can be achieved.
BD788 Features
the DC current gain for this device is 40 @ 200mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz
BD788 Applications
There are a lot of ON Semiconductor BD788 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
