BD680AS Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of -4A is necessary for high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD680AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD680AS Applications
There are a lot of ON Semiconductor BD680AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
