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BD679AG

BD679AG

BD679AG

ON Semiconductor

BD679AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD679AG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD679
Pin Count3
Number of Elements 1
Polarity NPN
Voltage 80V
Element ConfigurationSingle
Current 2A
Power Dissipation40W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage80V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage2.8V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4150 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.77000$0.77
10$0.67700$6.77
100$0.51910$51.91
500$0.41034$205.17

BD679AG Product Details

BD679AG Overview


In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.There is a transition frequency of 1MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD679AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz

BD679AG Applications


There are a lot of ON Semiconductor BD679AG applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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