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BD676G

BD676G

BD676G

ON Semiconductor

BD676G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD676G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating-4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD676
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage45V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3170 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.676720$5.67672
10$5.355396$53.55396
100$5.052261$505.2261
500$4.766284$2383.142
1000$4.496494$4496.494

BD676G Product Details

BD676G Overview


In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 30mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 200MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD676G Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz

BD676G Applications


There are a lot of ON Semiconductor BD676G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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