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BD435S

BD435S

BD435S

ON Semiconductor

BD435S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD435S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating4A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD435
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation36W
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage200mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1856 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.096000$6.096
10$5.750943$57.50943
100$5.425418$542.5418
500$5.118319$2559.1595
1000$4.828603$4828.603

BD435S Product Details

BD435S Overview


DC current gain in this device equals 40 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 3MHz.Collector current can be as low as 4A volts at its maximum.

BD435S Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz

BD435S Applications


There are a lot of ON Semiconductor BD435S applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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