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BD244B

BD244B

BD244B

ON Semiconductor

BD244B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD244B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Weight 1.8g
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Voltage - Rated DC -80V
Max Power Dissipation65W
Current Rating-6A
Base Part Number BD244
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation65W
Power - Max 65W
Gain Bandwidth Product3MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 6A
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 80V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 15
RoHS StatusNon-RoHS Compliant
Lead Free Lead Free
In-Stock:3641 items

BD244B Product Details

BD244B Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 3A 4V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 1A, 6A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at -5V to gain high efficiency.This device has a current rating of -6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Input voltage breakdown is available at 80V volts.Supplier package TO-220AB contains the product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.In extreme cases, the collector current can be as low as 6A volts.

BD244B Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at -5V
the current rating of this device is -6A
the supplier device package of TO-220AB

BD244B Applications


There are a lot of ON Semiconductor BD244B applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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