Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD242BG

BD242BG

BD242BG

ON Semiconductor

BD242BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD242BG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD242
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40mW
Case Connection COLLECTOR
Power - Max 40W
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.2V
Collector Base Voltage (VCBO) 115V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8204 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.309274$2.309274
10$2.178560$21.7856
100$2.055245$205.5245
500$1.938911$969.4555
1000$1.829161$1829.161

BD242BG Product Details

BD242BG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

BD242BG Features


the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz

BD242BG Applications


There are a lot of ON Semiconductor BD242BG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News