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BD237G

BD237G

BD237G

ON Semiconductor

BD237G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD237G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation25W
Peak Reflow Temperature (Cel) 260
Current Rating2A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD237
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation25W
Transistor Application AMPLIFIER
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage600mV
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6093 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.68000$0.68
10$0.58100$5.81
100$0.43390$43.39
500$0.34096$170.48

BD237G Product Details

BD237G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 3MHz.Collector current can be as low as 2A volts at its maximum.

BD237G Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz

BD237G Applications


There are a lot of ON Semiconductor BD237G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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