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BC857S

BC857S

BC857S

ON Semiconductor

BC857S datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available on our website

SOT-23

BC857S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation300mW
Terminal FormGULL WING
Current Rating-200mA
Frequency 200MHz
Base Part Number BC857
Number of Elements 2
Polarity PNP
Element ConfigurationDual
Power Dissipation300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 125
Height 1mm
Length 2mm
Width 1.25mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3439 items

BC857S Product Details

BC857S Description


The ON Semiconductor BC857S is designed for general purpose amplifier applications at collector currents to 200 mA.



BC857S Features


  • PNP Multi-Chip General Purpose Amplifier

  • Sourced from Process 68.

  • Pb-free Halide free



BC857S Applications


  • General usage and suitable for many different applications


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