ON SEMICONDUCTOR - BC857CDW1T1G - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE
SOT-23
BC857CDW1T1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
380mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC857CD
Pin Count
6
Number of Elements
2
Polarity
PNP
Element Configuration
Dual
Power Dissipation
380mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Transistor Type
2 PNP (Dual)
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
420
Height
1.1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:30754 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC857CDW1T1G Product Details
Description:
The BC857CDW1T1G is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed for use in general purpose switching and amplification applications. It has a maximum collector-emitter voltage of -45V, a maximum frequency of 100MHz, a maximum power dissipation of 380mW, a maximum collector current of -100mA, and a maximum DC current gain of 270.
Features: • PNP Bipolar Junction Transistor (BJT) • Maximum Collector-Emitter Voltage: -45V • Maximum Frequency: 100MHz • Maximum Power Dissipation: 380mW • Maximum Collector Current: -100mA • Maximum DC Current Gain: 270
Applications: • General purpose switching and amplification • Audio amplifiers • Motor control • Power management • Automotive applications
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