BC857BMTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 150MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts can be achieved.
BC857BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC857BMTF Applications
There are a lot of ON Semiconductor BC857BMTF applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
