BC850BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC850BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BC850BMTF Applications
There are a lot of ON Semiconductor BC850BMTF applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver