BC848BWT1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.The part has a transition frequency of 100MHz.The maximum collector current is 100mA volts.
BC848BWT1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BWT1 Applications
There are a lot of ON Semiconductor BC848BWT1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
