Name: BC846BPDW1T1G
Brand: ON Semiconductor
SKU: BC846BPDW1T1G
Price: 0.26000 USD
Availability: InStock

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BC846BPDW1T1G

Manufacturer part number:BC846BPDW1T1G

Manufacturer:ON Semiconductor

Description:TRANS NPN/PNP 65V 0.1A SOT363

Case Package:SOT-23

Datasheet:BC846BPDW1T1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	65V
Max Power Dissipation	380mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	BC846BP
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	380mW
Transistor Application	AMPLIFIER
Halogen Free	Halogen Free
Gain Bandwidth Product	100MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	65V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	65V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	600mV
Max Breakdown Voltage	65V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	5V
hFE Min	150
Height	990.6μm
Length	2.1844mm
Width	1.3462mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

BC846BPDW1T1G Product Details

Description:

The BC846BPDW1T1G is a NPN/PNP Bipolar Transistor Array from ON Semiconductor. It is a surface mount device in a SOT-363 package and has a maximum collector-emitter voltage of 65V and a maximum collector current of 0.1A.

Features:

• NPN/PNP Bipolar Transistor Array
• Surface Mount Device
• SOT-363 Package
• Maximum Collector-Emitter Voltage: 65V
• Maximum Collector Current: 0.1A
• Low Saturation Voltage
• High Gain Bandwidth Product
• High Switching Speed

Applications:

The BC846BPDW1T1G is suitable for a wide range of applications including switching, amplification, and signal processing. It is commonly used in automotive, industrial, and consumer electronics.