BC81740MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81740MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81740MTF Applications
There are a lot of ON Semiconductor BC81740MTF applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
