BC81716MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 100MHz is present in the part.Input voltage breakdown is available at 45V volts.A maximum collector current of 800mA volts can be achieved.
BC81716MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81716MTF Applications
There are a lot of ON Semiconductor BC81716MTF applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
