BC807-40LT3G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 100MHz.There is a breakdown input voltage of 45V volts that it can take.A maximum collector current of 500mA volts can be achieved.
BC807-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40LT3G Applications
There are a lot of ON Semiconductor BC807-40LT3G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
