BC637G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 200MHz.Maximum collector currents can be below 1A volts.
BC637G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BC637G Applications
There are a lot of ON Semiconductor BC637G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
