BC558BTA Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 30V volts.Maximum collector currents can be below 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor BC558BTA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
