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ATP106-TL-H

ATP106-TL-H

ATP106-TL-H

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 25m Ω @ 15A, 10V ±20V 1380pF @ 20V 29nC @ 10V ATPAK (2 leads+tab)

SOT-23

ATP106-TL-H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case ATPAK (2 leads+tab)
Surface MountYES
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Pin Count3
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Power Dissipation40W
Turn On Delay Time12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 15A, 10V
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 20V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 1.5mm
Length 6.5mm
Width 7.3mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3029 items

Pricing & Ordering

QuantityUnit PriceExt. Price

ATP106-TL-H Product Details

ATP106-TL-H Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1380pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

ATP106-TL-H Features


a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 110 ns


ATP106-TL-H Applications


There are a lot of ON Semiconductor
ATP106-TL-H applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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