50A02CH-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -60mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 120mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A breakdown input voltage of 50V volts can be used.Maximum collector currents can be below 500mA volts.
50A02CH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 120mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
50A02CH-TL-E Applications
There are a lot of ON Semiconductor 50A02CH-TL-E applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
